[1]ZHOU Kong-dan,LI Ning,LU Hua-xiang.Researching the robustness of single electron devices[J].CAAI Transactions on Intelligent Systems,2008,3(3):195-200.
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CAAI Transactions on Intelligent Systems[ISSN 1673-4785/CN 23-1538/TP] Volume:
3
Number of periods:
2008 3
Page number:
195-200
Column:
学术论文—人工智能基础
Public date:
2008-06-25
- Title:
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Researching the robustness of single electron devices
- Author(s):
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ZHOU Kong-dan; LI Ning; LU Hua-xiang
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Institute of Semiconductors; Chinese Academy Sciences; Beijing 100083; China
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- Keywords:
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single electron; neural network; robustness
- CLC:
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TP18
- DOI:
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- Abstract:
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This article analyses the features of single electron devices in an artificial neural network. The feasibility of constructing single electron circuits using an artificial neural network is p roved theoretically. Then, its tunneling effect and the function of a single electron oscillatorwere simulated and verified. Based on this, the app licability of a single electron oscillatorwas researched, and a single electron adder was created using an artificial neural net2 work. Simulationswere made to check its reliability and reduce the comp lexity of the circuit asmuch as possible. The results show that a neural network is an efficientmethod for the construction of a robust single electron circuit, and Psp ice is an effective tool for the simulation of an SET circuit.